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HN7G08FE
TOSHIBA Multichip Discrete Device
HN7G08FE
General-Purpose Amplifier Applications Switching and Muting Switch Applications
Q1
Low saturation voltage: VCE (sat) (1) = -15 mV (typ.) @IC = -10 mA/IB = -0.5 mA Large collector current: IC = -400 mA (max)
Unit: mm
Q1: 2SA1955F Q2: RN1106F
Q1 Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating -15 -12 -5 -400 -50 Unit V V V mA mA
(E1) 1. EMITTER1 (B1) 2. BASE1 3. COLLECTOR2 (C2) (E2) 4. EMITTER2 (B2) 5. BASE2 6. COLLECTOR1 (C1)
JEDEC JEITA TOSHIBA Weight: 0.003 g (typ.)

2-2J1E
Q2 Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 5 100 Unit V V V mA
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC* Tj Tstg Rating 100 150 -55~150 Unit mW C C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Total rating.
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HN7G08FE
Q1 Electrical Characteristics (Ta = 25C)
Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time (Note) Symbol ICBO IEBO hFE VCE(sat) (1) VCE(sat) (2) VBE(sat) fT Cob ton Test Circuit Test Condition VCB = -15 V, IE = 0 VEB =- 5 V, IC = 0 VCE =- 2 V, IC =- 10 mA IC =- 10 mA, IB =- 0.5 mA IC =- 200 mA, IB =- 10 mA IC =- 200 mA, IB =- 10 mA VCE =- 2 V, IC =- 10 mA VCB =- 10 V, IE = 0, f = 1 MHz Min 300 Typ. -15 -110 -0.87 130 4.2 40 Max -100 -100 1000 -30 -250 -1.2 mV V MHz pF Unit nA nA
Switching time
Storage time
tstg
280
ns
Fall time
tf
IB1 = -IB2 = 5 mA
65
Note: hFE classification A(A): 300~600, B(B): 500~1000 ( ) marking symbol
Q2 Electrical Characteristics (Ta = 25C)
Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Input resistor Resistor ratio Symbol ICBO ICEO IEBO hFE VCE(sat) VI (ON) VI (OFF) fT Cob Test Circuit Test Condition VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 10 mA IC = 5 mA, IB = 0.25 mA VCE = 0.2 V, IC = 5 mA VCE = 5 V, IC = 0.1 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz Min 0.074 80 0.7 0.5 3.29 0.09 Typ. 0.1 250 3 4.7 0.1 Max 100 500 0.138 0.3 1.3 0.8 6.11 0.11 V V V MHz pF k mA Unit nA
R1 R1/R2
Marking
Type Name
Equivalent Circuit (Top View)
5 4
hFE Rank
6
6
5
4 Q2
76A
Q1 3
1
2
1
2
3
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HN7G08FE
Q1
-0.5 -6 COLLECTOR CURRENT IC (A) -0.4 -0.3 IC - VCE 10000 -5 -4 DC CURRENT GAIN hFE -3 -2 -1 IB=-0.5mA 1000 COMMON EMITTER VCE = -2V Ta = 100C 25 hFE - IC
-0.2 -0.1
100
-25
COMMON EMITTER Ta = 25C 0 -1 -2 -3
-0. 0 -4 -5 COLLECTOR-EMITTER VOLTAGE VCE (V)
10 -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT IC (A)
-1000 COLLETOR EMITTER SATURATION VOLTAGE VCE(sat.) (mV)
VCE(sat) - IC BASES-EMITTER SATURATION VOLTAGE VBE(sat.) (V) COMMON EMITTER IC/IB = 20
-10
VBE(sat) - IC COMMON EMITTER IC/IB = 20 Ta = 25
-100 Ta = 100C -25 -10 25
-1
-1 -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT IC (A)
-0.1 -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT IC (A)
-1000 COLLECTOR CURRENT IC (mA)
IC - VBE 100 COLLECTOR OUTPUT CAPACITNCE Cob (pF)
Cob - VCB IE = 0 f = 1MHz Ta = 25
-100
Ta = 100C -25
10
-10
25 COMMON EMITTER VCE = -2V
-1 0 -0.4 -0.8 -1.2 -1.6
1 -0.1 -1 -10 -100
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-BASE VOLTAGE VCB (V)
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HN7G08FE
Q2
4
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HN7G08FE
(Q1, Q2 common)
PC* - Ta
(mW) COLLECTOR POWER DISSIPATION PC
200
150
100
50
0 0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE
Ta (C)
*:Total rating
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HN7G08FE
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01

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